2SD1252A_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SD1252A
TO-252
Unit: mm
■ Features
● High forward current transfer ratio hFE
which has satisfactory linearity
● Low collector to emitter saturation voltage VCE(sat)
● Complementary to 2SB929A
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
■ Absolute Maximum Ratings Ta = 25℃
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
80
Collector - Emitter Voltage
VCEO
80
V
Emitter - Base Voltage
VEBO
6
Collector Current - Continuous
Collector Current - Pulse
IC
3
A
ICP
5
Collector Power Dissipation
Tc = 25℃
35
PC
W
Ta = 25℃
1.3
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector- base breakdown voltage
VCBO Ic= 100 μA， IE= 0
80
Collector- emitter breakdown voltage
VCEO Ic= 30 mA， IB= 0
80
V
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
6
Collector-base cut-off current
ICBO VCB= 80 V , IE= 0
0.1 mA
Collector cutoff current
Collector cutoff current
ICES
ICEO
VCB= 80 V , IE= 0
VCB= 60 V , IE= 0
200
uA
300
Emitter cut-off current
IEBO VEB= 5V , IC=0
0.1 mA
Collector-emitter saturation voltage
VCE(sat) IC=3 A, IB=375mA
1.2
Base - emitter saturation voltage
VBE(sat) IC=3 A, IB=375mA
1.2 V
Base - emitte voltage
VBE VCE= 4V, IC= 3 A
1.8
DC current gain
hFE(1)
hFE(2)
VCE= 4V, IC= 1A
VCE= 4V, IC= 3A
40
250
10
Turn-on time
Storage time
Fall time
ton
tstg
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
tf
0.5
2.5
us
0.4
Transition frequency
■ Classification of hfe(1)
fT
VCE= 5V, IC= 500mA,f=10MHz
30
MHz
Type
2SD1252A-R 2SD1252-Q 2SD1252A-P
Marking
40-90
70-150
120-250
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