2SD1252 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)

SMD Type
Transistors
Silicon NPN Triple Diffusion Junction Type
2SD1252,2SD1252A
Features
Power transistors.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1252
60
V
VCBO
2SD1252A
80
V
Collector-emitter voltage
2SD1252
60
V
VCEO
2SD1252A
80
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
5
A
Collector power dissipation
Ta = 25
Tc = 25
1.3
W
PC
35
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Unit: mm
1 Base
2 Collector
3 Emitter
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