2SD1250A_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1250A
Transistors
■ Features
● High forward current transfer ratio hFE
which has satisfactory linearity
● Low collector to emitter saturation voltage VCE(sat)
● Complementary to 2SB928
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tc = 25℃
Ta = 25℃
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
200
180
V
6
2
A
3
30
W
1.3
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitte voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= 500 μA， IE= 0
VCEO Ic= 5 mA， IB= 0
VEBO IE= 500μA， IC= 0
ICBO VCB= 200 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=500 mA, IB=50mA
VBE(sat) IC= 500 mA, IB= 50mA
VBE VCE= 10V, IC= 400mA
hFE(1) VCE= 10V, IC= 150mA
hFE(2) VCE= 10V, IC= 400mA
fT
VCE= 10V, IC= 500mA,f=1MHz
Min Typ Max Unit
200
180
V
6
50
uA
50
1
1.2 V
1
60
240
50
20
MHz
■ Classification of hfe(1)
Type
Range
2SD1250A-Q 2SD1250A-P
60-140
100-240
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