2SD1250 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)

SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type
2SD1250
Features
High forward current transfer ratio hFE which has satisfactory linearity
Low collector-emitter saturation voltage VCE(sat)
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
TC = 25
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
200
V
VCEO
150
V
VEBO
6
V
IC
2
A
ICP
3
1.3
W
PC
30
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
hFE Classification
Rank
hFE
Q
60 to 140
P
100 to 240
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VBE
VCE(sat)
fT
Testconditons
IC = 500 ìA, IE = 0
IC =5 mA, IB = 0
IE = 500 ìA, IC = 0
VCB = 200 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 400 mA
VCE = 10 V, IC = 400 mA
IC = 500 mA, IB = 50 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
Min Typ Max Unit
200
V
150
V
6
V
50 ìA
50 ìA
60
240
50
1.0 V
1.0 V
20
MHz
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