2SD1221_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SD1221
■ Features
● Low collector saturation voltage
: VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
● High power dissipation: PC = 20 W (Tc = 25°C)
● Complementary to 2SB906
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Ta = 25℃
Tc = 25℃
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
60
60
V
7
3
A
0.5
1
W
20
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitte voltage
DC current gain
Turn-on time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 50 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 60 V , IE= 0
IEBO VEB= 7V , IC=0
VCE(sat) IC=3 A, IB=300mA
VBE(sat) IC=3 A, IB=300mA
VBE VCE= 5V, IC= 500mA
hFE(1) VCE= 5V, IC= 500mA
hFE(2) VCE= 5V, IC= 3 A
ton
tstg
See specified Test Circuit
tf
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 5V, IC= 500mA
Min Typ Max Unit
60
60
V
7
0.1
uA
0.1
0.4 1
1.2 V
0.7 1
60
300
20
0.8
1.5
us
0.8
70
pF
3
MHz
■ Classification of hfe(1)
Type
2SD1221-O
Range
60-120
2SD1221-Y
100-200
2SD1221-G
150-300
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