2SD1119_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1119
Transistors
■ Features
● Collector Current Capability IC=3 A
● Collector Emitter Voltage VCEO=25 V
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
40
VCEO
25
V
VEBO
7
IC
3
A
PC
500
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100 uA， IC= 0
ICBO VCB= 40 V , IE= 0
IEBO VEB= 7V , IC=0
VCE(sat) IC=3 A, IB=100 mA
VBE(sat) IC=3 A, IB=100 mA
VCE= 2V, IC= 500mA
hFE
VCE= 2V, IC= 2 A
Cob VCB= 20V, IE= 0,f=1MHz
fT
VCE= 6V, IC= 50 mA,f=200MHz
Min Typ Max Unit
40
25
V
7
0.1
uA
0.1
1
V
1.2
230
600
150
50 pF
150
MHz
■ Classification of hfe(1)
Type
2SD1119-Q
Range
230-380
Marking
TQ
2SD1119-R
340-600
TR
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