2SD1006_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1006
Transistors
Features
High collector to emitter voltage: VCEO 100V.
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector l power dissipation
Junction temperature
Storage temperature
*. PW 10ms,duty cycle 50%
Electrical Characteristics Ta = 25
Symbol
VCBO
VCEO
VEBO
IC
IC(pu)
Pc
Tj
Tstg
Rating
100
100
5
0.7
1.2
2
150
-55 to +150
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 μA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic=1 mA， IB= 0
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
Collector-base cut-off current
ICBO VCB= 100 V , IE= 0
Emitter cut-off current
IEBO VEB= 5V , IC=0
Collector-emitter saturation voltage *
VCE(sat) IC=500 mA, IB=50mA
Base - emitter saturation voltage *
VBE(sat) IC=500 mA, IB=50mA
Base - emitter voltage *
VBE VCE= 10V, IC= 10mA
DC current gain *
VCE= 1V, IC= 5mA
hFE
VCE= 1V, IC= 100mA
Collector output capacitance
Cob VCB= 10V, IE=0,f=1MHz
Transition frequency
fT
VCE= 10V, IC= 10mA
*. PW 350u s ,duty cycle 2%
hFE Classification(2)
Type
2SD1006-M
2SD1006-L
2SD1006-K
Range
90-180
135-270
200-400
Marking
HM
HL
HK
1.Base
2.Collector
3.Emitter
Unit
V
V
V
A
A
W
Min Typ Max Unit
100
100
V
5
0.1
uA
0.1
0.6
1.5 V
0.55
0.68
45 200
90 200 400
10
pF
90
MHz
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