2SD1001-HF_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1001-HF
Transistors
■ Features
● High collector saturation voltage.
VCE(sat) > 80V
● Complimentary to 2SB800-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
(Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1: Pw ≤ 100ms,duty cycle ≤ 50℅
■ Electrical Characteristics Ta = 25℃
Symbol
Rating
Unit
VCBO
80
VCEO
80
V
VEBO
5
IC
300
mA
ICP
500
PC
2
W
TJ
150
℃
Tstg
-55 to 150
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 μA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 1 mA， RBE= ∞
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
Collector-base cut-off current
ICBO VCB= 80 V , IE= 0
Emitter cut-off current
IEBO VEB= 5V , IC=0
Collector-emitter saturation voltage (Note.1) VCE(sat) IC=300 mA, IB=30mA
Base - emitter saturation voltage
(Note.1) VBE(sat) IC=300 mA, IB=30mA
Base - emitter voltage
(Note.1)
VBE VCE= 6V, IC= 10mA
DC current gain
(Note.1)
VCE= 1V, IC= 50mA
hFE
VCE= 2 V, IC= 300mA
Collector output capacitance
Cob VCB= 6V, IE=0,f=1MHz
Transition frequency
fT
VCE= 6V, IE= -10mA
Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Type
Range
Marking
2SD1001- M-HF 2SD1001- L-HF 2SD1001- K-HF
90-180
135-270
200-400
EM F
EL F
EK F
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
80
80
V
5
0.1
uA
0.1
0.15 0.6
V
0.86 1.2
600 645 700 mV
90 200 400
30 80
7
pF
140
MHz
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