2SD1000 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SD1000
Features
World standard miniature package:SOT-89.
Low collector saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
0.7
A
Collector Current (pulse) *
IC
1.0
A
Total power dissipation
PT
2.0
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pulse Test PW 10ms, Duty Cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
hFE Classification
Marking
hFE
LM
90 180
LL
135 270
Symbol
Testconditons
ICBO VCB = 60 V, IE = 0 A
IEBO VEB = 5.0 V, IC = 0 A
VCE = 1.0 V, IC = 100 mA
hFE
VCE = 1.0 V, IC = 500 mA
VCE(sat) IC = 500 mA, IB = 50 mA
VBE(sat) IC = 500 mA, IB = 50 mA
VBE VCE = 6.0 V, IC = 10 mA
fT VCE = 6.0 V, IE = -10 mA
Cob VCB = 6 V, IE = 0, f = 1.0 MHz
LK
200 400
Min Typ Max Unit
100 nA
100 nA
90 200 400
50 150
0.12 0.4 V
0.9 1.2 V
600 635 700 mV
110
MHz
13
pF
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