2SC5548A_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SC5548A
■ Features
● High speed switching
● High collector breakdown voltage
● High DC current gain
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current
Collector Power Dissipation
Ta = 25℃
Tc = 25℃
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
600
400
V
7
2
4
A
0.5
1
W
15
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn On Time
Storage Time
Fall Time
■ Marking
Marking
C5548A
Symbol
Test Conditions
VCBO Ic= 1 mA， IE= 0
VCEO Ic= 10 mA，IB=0
VEBO IE= 1 mA， IC= 0
ICBO VCB= 480V , IE= 0
IEBO VEB= 7V , IC=0
VCE(sat) IC=800mA, IB=100mA
VBE(sat) IC=800mA, IB=100mA
VCE= 5V, IC=1mA
hFE
VCE= 5V, IC=200mA
20 µs V_CC ≈200 V
ton
I_B1 ^IC
tstg
I_B2
OUT-
INPUT ^IB21
PUT
tf
I_B1 = 0.1 A, I_B2 = −0.2 A
DUTY CYCLE ≤ 1%
Min Typ Max Unit
600
400
V
7
20
uA
10
1
V
1.3
20
40
100
0.5
3
us
0.3
www.kexin.com.cn ¹