2SC5355 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED MESA TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

SMD Type
Transistors
Silicon NPN Triple Diffused Mesa Type
2SC5355
Features
Excellent switching times: tr = 0.5 ìs (max), tf = 0.3 ìs (max)
High collector breakdown voltage: VCEO = 400 V
High DC current gain: hFE = 20 (min)
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current ( DC)
Collector current (Pulse)
Base current
Collector power dissipation Ta = 25
TC = 25
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
600
V
VCEO
400
V
VEBO
7
V
IC
5
A
ICP
7
IB
1
A
1.5
PC
W
25
Tj
150
Tstg
-55 to +150
Unit: mm
1 Base
2 Collector
3 Emitter
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