2SC5342UF_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC5342UF
Transistors
■ Features
●Large collector current : IC=500mA
● Low collector saturation voltage enabling
low-voltage operation
● Complementary to 2SA1979UF
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
40
32
5
500
200
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB = 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 40V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=100mA, IB=10mA
VBE(sat) IC=100mA, IB=10mA
hFE VCE= 1V, IC= 100mA
Cob VCB=6V, IE=0, f=1MHz
fT
VCE= 6V, IE= -20mA
■ Classification of hfe
Type
2SC5342UF-O
Range
Marking
70-140
BO
2SC5342UF-Y
120-240
BY
Unit
V
mA
mW
℃
Min Typ Max Unit
40
32
V
5
0.1
uA
0.1
0.25
V
1.2
70
240
7
pF
300
MHz
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