2SC5214_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC5214
Transistors
■ Features
● High fT fT=100MHz typ
● Excellent liinearity of DC forward current gain
● High collector current ICP =1.5A
● Complementary to 2SA1947
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
30
25
4
1
1.5
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 25V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=500mA, IB=25mA
VBE(sat) IC=500mA, IB=25mA
hFE VCE= 1V, IC= 500mA
fT
VCE= 6V, IE= -10mA
■ Classification of hfe
Type
2SC5214- C
Range
Marking
55-110
WC
2SC5214- D
90-180
WD
2SC5214- E
150-300
WE
1.Base
2.Collector
3.Emitter
Unit
V
A
mW
℃
Min Typ Max Unit
30
25
V
4
1
uA
1
0.5
V
1.2
55
300
100
MHz
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