2SC5212_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC5212
Transistors
■ Features
● Low Collector saturation voltage
● High fT fT=180MHz typ
● Excellent liinearity of DC forward current gain
● High collector current ICP =1A
● Complementary to 2SA1946
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
25
Collector - Emitter Voltage
VCEO
20
V
Emitter - Base Voltage
VEBO
4
Collector Current - Continuous
Collector Current - Pulse
IC
0.7
A
ICP
1
Collector Power Dissipation
PC
500
mW
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 25V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=500mA, IB=25mA
VBE(sat) IC=500mA, IB=25mA
hFE VCE= 4V, IC= 100mA
fT
VCE= 6V, IE= -10mA
Min Typ Max Unit
25
20
V
4
1
uA
1
0.2 0.5
V
1.2
150
800
180
MHz
■ Classification of hfe
Type
2SC5212- E
Range
Marking
150-300
UE
2SC5212- F
250-500
UF
2SC5212- G
400-800
UG
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