2SC5209_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC5209
Transistors
■ Features
● High hFE : hFE=600 to 1800
● High breakdown voltage
●Small package for mounting
● Complementary to 2SA1944
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
50
50
6
1
2
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 40V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=500mA, IB=10mA
VBE(sat) IC=500mA, IB=10mA
hFE VCE= 6V, IC= 100mA
Cob VCB= 10V,IE=0,f=1MHz
fT
VCE= 10V, IE= -10mA
■ Classification of hfe
Type
2SC5209- H
Range
Marking
600-1200
RH
2SC5209- J
900-1800
RJ
1.Base
2.Collector
3.Emitter
Unit
V
A
mW
℃
Min Typ Max Unit
50
50
V
6
0.1
uA
0.1
0.15 0.5
V
1.2
600
1800
12
pF
130
MHz
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