2SC5063 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type
2SC5063
Features
High-speed switching
High collector to base voltage VCBO
Wide area of safe operation (ASO)
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power dissipation TC=25
Ta=25
Junction temperature
Storage temperature
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
500
V
VCES
500
V
VCEO
400
V
VEBO
7
V
ICP
3
A
IC
1.5
A
IB
0.5
A
25
PC
W
1.3
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Testconditons
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.8A
IC = 0.8A, IB = 0.16A
IC = 0.8A, IB = 0.16A
VCE = 10V, IC = 0.2A, f = 10MHz
IC = 0.8A, IB1 = 0.16A, IB2 = -0.32A,
VCC = 150V
Min Typ Max Unit
100 ìA
100 ìA
400
V
15
8
1
V
1.5 V
25
MHz
0.7
2
ìs
0.3
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