2SC5026_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC5026
Transistors
■ Features
● Low collector to emitter saturation voltage VCE(sat).
● High collector to emitter voltage VCEO.
● Complementary to 2SA1890
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
80
VCEO
80
V
VEBO
5
IC
1
A
ICP
1.5
PC
1
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 60V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=500mA, IB=50mA
VBE(sat) IC=500mA, IB=50mA
VCE= 2V, IC= 100mA
hFE
VCE= 2V, IC= 500mA
Cob VCB= 10V,IE=0,f=1MHz
fT
VCE= 10V, IE= -50mA,f=200MHz
Min Typ Max Unit
80
80
V
5
0.1
uA
0.1
0.15 0.3
V
0.85 1.2
120
340
60
10 20 pF
120
MHz
■ Classification of hfe(1)
Type
2SC5026-R
Range
Marking
120-240
2AR
2SC5026-S
170-340
2AS
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