2SC4976_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SC4976
■ Features
● High fT : fT=400MHz(typ).
● High breakdown voltage
● Large current capacitance.
● Complementary to 2SA1875
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
200
Collector - Emitter Voltage
VCEO
200
V
Emitter - Base Voltage
VEBO
3
Collector Current - Continuous
IC
300
Collector Current - Pulse
ICP
600
mA
Base Current
IB
30
Collector Power Dissipation
0.8
PC
W
Tc = 25℃
12
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Reverse Transfer Capacitance
Collector output capacitance
Transition frequency
■ Classification of hfe(1)
Type
2SC4976-D
2SC4976-E
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 150V , IE= 0
IEBO VEB= 2V , IC=0
VCE(sat) IC=50mA, IB=5mA
VBE(sat) IC=50mA, IB=5mA
VCE= 10V, IC= 50mA
hFE
VCE= 10V, IC= 250mA
Cre VCB= 30V,f=1MHz
Cob VCB= 30V,f=1MHz
fT
VCE= 10V, IC= 100mA
2SC4976-F
Range
60-120
100-200
160-320
1 Base
2 Collector
3 Emitter
Min Typ Max Unit
200
200
V
3
0.1
uA
1
1
V
1
60
320
20
3.4
pF
4.2
400
MHz
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