2SC4702 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SMD Type
Silicon NPN Epitaxial
2SC4702
Transistors
Features
High breakdown voltage
VCEO = 300 V
Small Cob
Cob = 1.5 pF Typ.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
300
V
VCEO
300
V
VEBO
5
V
IC
100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
DC current gain
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
ICBO VCB = 250V, IE=0
VCE(sat) IC = 30mA , IB = 3mA
hFE VCE = 6V , IC = 2mA
fT VCE = 6V , IC = 5mA
Cob VCB = 10V , IE=0, f = 1MHz
1.Base
2.Emitter
3.collector
Min Typ Max Unit
300
V
300
V
5
V
0.1 ìA
0.5 V
60
150
80
MHz
1.5
pF
Marking
Marking
XV-
www.kexin.com.cn ¹