2SC4695 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amp, Muting Applications

SMD Type
TransistIoCrs
NPN Epitaxial Planar Silicon Transistor
2SC4695
Features
Adoption of FBET process.
High DC current gain.
High VEBO (VEBO 25V).
High reverse hFE (150 typ).
Small ON resistance [Ron=1W (IB=5mA)].
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
50
V
VCEO
20
V
VEBO
25
V
IC
500
mA
ICP
800
mA
IB
100
mA
PC
250
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
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