2SC4684 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

SMD Type
Silicon NPN Epitaxial
2SC4684
Transistors
Features
High DC current gain.
Low collector saturation voltage.
High power dissipation.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse *
Base current
Collector power dissipation
Junction temperature
Storage temperature
Ta = 25
Tc = 25
Symbol
Rating
Unit
VCBO
50
V
VCEO
20
V
VCES
40
V
VEBO
8
V
IC
5
A
ICP
8
A
IB
0.5
A
1.0
W
PC
10
W
Tj
150
Tstg
-55 to +150
* Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = 50 V, IE = 0
IEBO VEB = 8 V, IC = 0
VCEO IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.5 A
hFE
VCE = 2 V, IC = 4 A
VCE (sat) IC = 4 A, IB = 40 mA
VBE VCE = 2 V, IC = 4 A
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
1 Base
2 Collector
3 Emitter
Min Typ Max Unit
100 nA
100 nA
20
V
800
3200
250
0.5 V
1.2 V
150
MHz
45
pF
Marking
Marking
C4684
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