2SC4667 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)

SMD Type
Silicon NPN Epitaxial
2SC4667
TransistIoCrs
Features
High transition frequency: fT = 400 MHz (typ.)
Low saturation voltage: VCE (sat) = 0.3 V (max)
High speed switching time: tstg = 15 ns (typ.)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
40
15
5
200
40
100
125
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = 40 V, IE = 0
IEBO VEB = 5 V, IC = 0
hFE VCE = 1 V, IC = 10 mA
VCE (sat) IC = 20 mA, IB = 1 mA
VBE (sat) IC = 20 mA, IB = 1 mA
fT VCE = 10 V, IC = 10 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
hFE Classification
Marking
Rank
hFE
R
40 80
CH
O
70 140
Y
120 240
Unit
V
V
V
mA
mA
mW
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
0.1 ìA
0.1 ìA
40
240
0.3 V
1.0 V
200 400
MHz
4
6 pF
70
ns
15
ns
30
ns
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