2SC4666 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER, SWITCHING APPLICATIONS)

SMD Type
Silicon NPN Epitaxial
2SC4666
TransistIoCrs
Features
High hFE: hFE = 600 3600
High voltage: VCEO = 50 V
High collector current: IC = 150 mA (max)
Small package
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
150
mA
IB
30
mA
PC
100
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Testconditons
Min
ICBO VCB = 50 V, IE = 0
IEBO VEB = 5 V, IC = 0
hFE VCE = 6 V, IC = 2 mA
600
VCE (sat) IC = 100 mA, IB = 10 mA
fT VCE = 10 V, IC = 10 mA
100
Cob VCB = 10 V, IE = 0, f = 1 MHz
NF(1)
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,Rg =
10 kÙ
NF(2)
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,Rg =
10 kÙ
Typ Max Unit
0.1 ìA
0.1 ìA
3600
0.12 0.25 V
250
MHz
3.5
pF
0.5
dB
0.3
dB
hFE Classification
Marking
Rank
hFE
P
A
B
600 1800 1200 3600
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