2SC4617 Datasheet, PDF (1/3 Pages) Motorola, Inc – NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

SMD Type
Transistors
Features
Low Cob : Cob=2.0pF (Typ.)
NPN silicon transistor
General purpose transistor
2SC4617
SOT-523
1.6+0.1
-0.1
1.0+0.1
-0.1
0.2+0.05
-0.05
2
1
Unit: mm
0.1^+0.01
-0.01
3
0.5^+0.1
-0.1
0.3+0.25
-0.05
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
7
V
IC
0.15
A
PC
0.15
W
Tj
150
Tstg
-55 to +150
1. Base
2. Emitter
3. Collecter
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Testconditons
VCBO IC=50ìA
VCEO IC=1mA
VEBO IE=50ìA
ICBO VCB=60V
IEBO VEB=7V
hFE VCE=6V, IC=1mA
VCE(sat) IC/IB=50mA/5mA
Cob VCE=12V, IE=0A, f=1MHz
fT VCE=12V, IE=-2mA, f=100MHz
Min Typ Max Unit
60
V
50
V
7
V
0.1
A
0.1
A
120
560
0.4 V
2 3.5 pF
180
MHz
hFE Classification
Marking
Rank
hFE
BQ
Q
120 270
BR
R
180 390
BS
S
270 560
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