2SC4520 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Speed Switching Applications

SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SC4520
Features
Adoption of FBET, MBIT process.
Large current capacity.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Small-sized package.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
45
V
VEBO
5
V
IC
1.5
A
ICP
3
A
PC
1.3
W
Tj
150
Tstg
-55 to +150
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