2SC4519 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Speed Switching Applications

SMD Type
TransistIoCrs
NPN Epitaxial Planar Silicon Transistor
2SC4519
Features
Adoption of FBET process.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Small-sized package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
45
V
VEBO
5
V
IC
500
mA
Icp
1
A
PC
200
mW
Tj
150
Tstg
-55 to +150
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