2SC4497 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL APPLICATIONS)

SMD Type
Transistors
Silicon NPN Triple Diffused Type
2SC4497
Features
High voltage.
Low saturation voltage.
Small collector output capacitance.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
300
V
VCEO
300
V
VEBO
6
V
IC
100
mA
IB
20
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = 300 V, IE = 0
IEBO VEB = 6 V, IC = 0
V(BR)CBO IC = 0.1 mA, IE = 0
V(BR)CEO IC = 1 mA, IB = 0
VCE = 10 V, IC = 20 mA
hFE
VCE = 10 V, IC = 1mA
VCE (sat) IC = 20 mA, IB = 2 mA
VBE (sat) IC = 20 mA, IB = 2 mA
fT VCE = 10 V, IC = 10 mA
Cob VCB = 20 V, IE = 0, f = 1 MHz
hFE Classification
Marking
Rank
hFE
3R
R
30 90
3O
O
50 150
1.Base
2.Emitter
3.collector
Min Typ Max Unit
0.1 ìA
0.1 ìA
300
V
300
V
30
150
20
0.5 V
1.2 V
70
MHz
3
4 pF
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