2SC4413 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amp Applications

SMD Type
TransistIoCrs
NPN Epitaxial Planar Silicon Transistor
2SC4413
Features
Adoption of FBET process.
High DC current gain.
Low collector-to-emitter saturation voltage.
High VEBO.
Small Cob.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Base current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
15
V
IC
100
mA
ICP
200
mA
IB
20
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Marking
Marking
GY
Symbol
Testconditons
ICBO VCB = 40V, IE=0
IEBO VEB = 10V, IC=0
hFE VCE = 5V , IC = 10mA
fT VCE = 10V , IC = 10mA
Cob VCB = 10V, f = 1MHz
VCE(sat) IC = 50mA , IB = 1mA
VBE(sat) IC = 50mA , IB = 1mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO ^{IC = 1mA , RBE =}
V(BR)EBO ^{IE = 10ìA , IC = 0}
Min Typ Max Unit
0.1 ìA
0.1 ìA
800 1500 3200
200
MHz
1.5
pF
0.1 0.5 V
0.8 1.1 V
60
V
50
V
15
V
www.kexin.com.cn ¹