2SC4409 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

SMD Type
Transistors
Power Switching Applications
2SC4409
Features
Low Collector Saturation Voltage: VCE(sat) = 0.5V(max)(IC = 1A)
High Speed Switching Time: tstg = 500ns(typ.)
Small Flat Package
PC = 1.0 to 2.0W (mounted on a ceramic substrate)
Complementary to 2SA1681
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
2
A
Base Current
IB
0.2
A
Collector Power Dissipation
PC
0.5
W
PC *
1
Jumction temperature
Tj
150
Storage temperature Range
Tstg
* Mounted on a ceramic board (250 mm² x 0.8 t)
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage
Transition Frequency
Collector Output Capacitance
Turn-ON Time
Storage Time
Fall Time
Symbol
Testconditons
ICBO VCB = 80V , IE = 0
IEBO VEB = 6V , IC = 0
VCE = 2V , IC = 100mA
hFE
VCE = 2V , IC = 1.5A
VCE(sat) IC = 1A , IB = 0.05A
VBE(sat) IC = 1A , IB = 0.05A
V(BR)CEO IC = 10mA, IB = 0
fT VCE = 2V , IC = 100mA
Cob VCB = 10V , IE = 0, f = 1MHz
ton
tstg See Test Circuit
tf
Min Typ Max Unit
0.1 ìA
0.1 ìA
120
400
40
0.5 V
1.2 V
50
V
100
MHz
14
pF
0.1
0.5
ìs
0.1
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