2SC4390 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-hFE, AF Amp Applications

SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SC4390
Features
Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Large current capacity (IC=2A).
Low collector-to-emitter saturation voltage
(VCE(sat) 0.3V).
High VEBO (VEBO 15V).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
20
V
VCEO
10
V
VEBO
15
V
IC
2
A
ICP
4
A
IB
0.4
A
PC
500
mW
Tj
150
Tstg
-55 to +150
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