2SC4375_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC4375
Transistors
■ Features
● Collector Current Capability IC=1.5 A
● Collector Emitter Voltage VCEO=30 V
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
30
30
5
1.5
500
250
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 1 mA， IE= 0
VCEO Ic= 10 mA， IB= 0
VEBO IE= 1 mA， IC= 0
ICBO VCB= 30 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=1.5 A, IB=30mA
VBE(sat) IC=1.5 A, IB=30mA
VBE VCE= 2V, IC= 500mA
hFE VCE= 2V, IC= 500mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 2V, IC= 0.5 A
■ Classification of hfe
Type
2SC4375-O
Range
100-200
Marking
GO
2SC4375-Y
160-320
GY
Unit
V
A
mW
℃/W
℃
Min Typ Max Unit
30
30
V
5
0.1
uA
0.1
2
1.2 V
1
100
320
40 pF
120
MHz
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