2SC4366 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SMD Type
TransistIoCrs
Silicon NPN Epitaxial
2SC4366
Features
Low Frequency amplifier.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
15
V
IC
300
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Base-emitter voltage
DC current gain
Collector-emitter saturation voltage
Symbol
Testconditons
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
ICBO VCB = 50V, IE=0
VBE VCE = 6V , IC = 1mA
hFE VCE = 6V , IC = 100mA
VCE(sat) IC = 300mA , IB = 30mA
Min Typ Max Unit
60
V
50
V
15
V
1 ìA
0.75 V
800
2000
0.3 V
Marking
Marking
ZI-
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