2SC4226 Datasheet, PDF (1/1 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SC4226
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Features
Low noise and high gain.
NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz
High gain.
|S21e|² = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
20
V
VCEO
12
V
VEBO
3.0
V
IC
100
mA
PC
150
mW
Tj
150
Tstg
-65 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
1 Emitter
2^{1 E}B^mita^terse
2 Base
3^{3 C}C^olleo^ctoll^recotr
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Insertion power gain
Noise figure
Reverse transfer capacitance
Transition frequency
*. Pulse measurement: PW 350
Symbol
Testconditons
ICBO VCB = 10 V, IE = 0
IEBO VEB = 1.0 V, IC = 0
hFE VCE = 3V, IC = 7 mA
S21e ² VCE = 3V, IC = 7 mA, f = 1 GHz
NF VCE = 3 V, IC = 7 mA, f = 1 GHz
Cre VCB = 3 V, IE = 0 , f = 1 MHz
fT
VCE =3V, IC = 7 mA
s, Duty Cycle 2%.
hFE Classification
Marking
Rank
hFE
R23
R23
40 80
R24
R24
70 140
R25
R25
125 250
Min Typ Max Unit
1.0
A
1.0
A
40 110 250
7
9
dB
1.2 2.5 dB
0.7 1.5 pF
3.0 4.5
GHz
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