2SC4215 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY FM, RF, MIX, IF AMPLIFIERAPPLICATIONS)

SMD Type
Silicon NPN Epitaxial
2SC4215
Features
Small reverse transfer capacitance: Cre = 0.55 pF (typ.)
Low noise figure: NF = 2dB (typ.) (f = 100 MHz)
TransistIoCrs
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
40
V
VCEO
30
V
VEBO
4
V
IC
20
mA
IB
4
mA
PC
100
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
Symbol
Testconditons
ICBO VCB = 40 V, IE = 0
IEBO VEB = 4 V, IC = 0
hFE VCE = 6 V, IC = 1 mA
Cre VCB = 10 V, f = 1MHz
fT VCE = 6 V, IC = 1 mA
Cc.rbb' VCB = 6 V, IE = -1mA, f = 30 MHz
NF
VCC = 6V, IE = -1mA, f = 100MHz,
Gpe
Min Typ Max Unit
0.1 ìA
0.5 ìA
40
200
0.55
pF
260 550
MHz
25 ps
2
5 dB
17 23
dB
hFE Classification
Marking
hFE
QR
40 80
QO
70 140
QY
100 200
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