2SC4213 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)

SMD Type
Silicon NPN Epitaxial
2SC4213
TransistIoCrs
Features
High emitter-base voltage: VEBO = 25 V (min).
High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA).
Low on resistance: RON = 1Ù (typ.) (IB = 5 mA).
High DC current gain: hFE = 200 1200.
Small package.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
50
V
VCEO
20
V
VEBO
25
V
IC
300
mA
IB
60
mA
PC
100
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Turn-on time
Symbol
Testconditons
ICBO VCB = 50 V, IE = 0
IEBO VEB = 25 V, IC = 0
hFE VCE = 2 V, IC = 4 mA
VCE (sat) IC = 30 A, IB = 3 mA
VBE VCE = 2 V, IC = 4 mA
fT VCE = 6 V, IC = 4 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
ton
Storage time
tstg
Fall time
hFE Classification
Marking
hFE
AA
200 700
AB
350 1200
tf
Duty cycle 2%
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
0.1 ìA
0.1 ìA
200
1200
0.042 0.1 V
0.61
V
30
MHz
4.8 7 pF
160
ns
500
ns
130
ns
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