2SC4177 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

SMD Type
Features
High dc current gain
High voltage.
NPN Silicon Epitaxia
2SC4177
TransistIoCrs
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
5
V
IC
100
mA
PT
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base emitter voltage *
Gain bandwidth product
Output capacitance
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
ICBO VCB = 60V, IE=0
IEBO VEB = 5V, IC = 0
hFE VCE = 6V , IC = 1.0mA
VCE(sat) IC = 100mA, IB = 10mA
VBE(sat) IC = 100mA, IB = 10mA
VBE VCE = 6V, IC = 1.0mA
fT VCE = 6V, IE = -10mA
Cob VCE = 6V, IE = 0, f = 1MHz
Min Typ Max Unit
0.1 ìA
0.1 ìA
90 200 600
0.15 0.3 V
0.86 1.0 V
0.55 0.62 0.65 V
250
MHz
3.0
pF
hFE Classification
Marking
hFE
L4
90 180
L5
135 270
L6
200 400
L7
300 600
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