2SC4173 Datasheet, PDF (1/1 Pages) NEC – HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR

SMD Type
NPN Silicon Epitaxia
2SC4173
Features
High gain bandwidth product: fT=200MHz min.
TransistIoCrs
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
40
V
VEBO
5
V
IC
500
mA
PT
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
B12
75 150
B13
100 200
Symbol
Testconditons
ICBO VCB = 40V, IE=0
IEBO VEB = 4V, IC=0
hFE VCE = 1V , IC = 150mA
VCE(sat) IC = 500mA , IB = 50mA
VBE(sat) IC = 500mA , IB = 50mA
fT VCE = 10V , IE = -20mA
Cob VCB = 10V , IE = 0 , f = 1.0MHz
ton VCC = 30V ,
tstg IC = 150mA ,
toff IB1 = -IB2 = 15mA
B14
150 300
Min Typ Max Unit
100 nA
100 nA
75 150 300
0.25 0.75 V
1.0 1.2 V
200 400
MHz
3.5 8.0 pF
30
ns
150
ns
180
ns
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