2SC4168_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SC4168
■ Features
● Fast switching speed.
● High gain-bandwidth product.
● Low saturation voltage.
● Complementary to 2SA1607.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
40
Collector - Emitter Voltage
VCEO
20
V
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
Peak Collector Current
IC
150
mA
ICP
300
Collector Power Dissipation
PC
200
mW
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Delay time
Rise time
Storage time
Fall time
Collector output capacitance
Transition frequency
■ Classification of hfe
Type
Range
Marking
2SC4168-GT3
60-120
GT3
2SC4168-GT4
90-180
GT4
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 30 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC= 10 mA, IB= 1mA
VBE(sat) IC= 10 mA, IB= 1mA
hFE VCE= 1V, IC= 10mA
td
tr
See specified Test Circuit
ts
tf
Cob VCB= 10V, f=1MHz
fT
VCE= 10V, IC= 10mA
2SC4168-GT5
135-270
GT5
Min Typ Max Unit
40
20
V
5
0.1
uA
0.1
0.08 0.2
V
0.72 1
60
270
11 20
10 20
ns
70 180
15 25
2.6
pF
700
MHz
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