2SC4118 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING SPPLICATIONS)

SMD Type
Silicon NPN Epitaxial
2SC4118
TransistIoCrs
Features
Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
35
V
VCEO
30
V
VEBO
5
V
IC
500
mA
IB
50
mA
PC
100
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = 35 V, IE = 0
IEBO VEB = 5 V, IC = 0
VCE = 1 V, IC = 100 mA
hFE
VCE = 6 V, IC = 400 mA
VCE (sat) IC = 100 mA, IB = 10 mA
VBE VCE = 1 V, IC = 100 mA
fT VCE = 6 V, IC = 20 mA
Cob VCB = 6 V, IE = 0, f = 1 MHz
Min Typ Max Unit
0.1 ìA
0.1 ìA
70
240
25
0.1 0.25 V
0.8 1.0 V
300
MHz
7
pF
hFE Classification
Marking
hFE
WO
70 140
WY
120 240
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