2SC4116 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

SMD Type
Silicon NPN Epitaxial
2SC4116
TransistIoCrs
Features
High voltage and high current: VCEO = 50 V, IC = 150 mA (max).
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ).
High hFE: hFE = 70 700.
Low noise: NF = 1dB (typ.), 10dB (max).
Small package.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
5
V
IC
150
mA
IB
30
mA
PC
100
mW
Tj
125
Tstg
-55 to +125
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector-emitter on resistance
Symbol
Testconditons
ICBO VCB = 60V, IE = 0
IEBO VEB = 5V, IC = 0
hFE VCE = 6V, IC = 2mA
VCE (sat) IC = 100mA, IB = 10mA
fT VCE = 10V, IC = 1mA
Cob VCB = 10V, IE = 0, f = 1MHz
NF
VCE = 6V, IC = 0.1mA, f = 1kHz, Rg =
10kÙ
Min Typ Max Unit
0.1 ìA
0.1 ìA
70
700
0.1 0.25 V
80
MHz
2.0 3.5 pF
1.0 10 dB
hFE Classification
Marking
hFE
LO
70 140
LY
120 240
LG
200 400
LL
350 700
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