2SC4104 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistor

SMD Type
TransistIoCrs
NPN Epitaxial Planar Silicon Transistor
2SC4104
Features
High fT.
Small reverse transfer capacitance.
Adoption of FBET process.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
70
V
VCEO
60
V
VEBO
4
V
IC
50
mA
Icp
100
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Base-collector time constant
Output capacitance
Reverse transfer capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
hFE Classification
Marking
Rank
hFE
3
60 120
YY
4
90 180
Symbol
Testconditons
ICBO VCB = 40V, IE=0
IEBO VEB = 3V, IC=0
hFE VCE = 10V , IC = 10mA
fT VCE = 10V , IC = 10mA
rbb,cc VCE = 10V , IC = 10mA
Cob VCB = 10V , f = 1.0MHz
Cre VCB = 10V , f = 1.0MHz
VCE(sat) IC = 20mA , IB = 2mA
VBE(sat) IC = 20mA , IB = 2mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
5
135 270
1.Base
2.Emitter
3.collector
Min Typ Max Unit
0.1 ìA
1.0 ìA
60
270
350 700
MHz
8
ps
1.3
pF
1.0
pF
0.5 V
1.0 V
70
V
60
V
4
V
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