2SC4102 Datasheet, PDF (1/1 Pages) Rohm – High-voltage Amplifier Transistor(120V, 50mA)

SMD Type
Transistors
High-voltage Amplifier Transistor
2SC4102
Features
High breakdown voltage.(VCEO = 120V)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
120
V
VCEO
120
V
VEBO
5
V
IC
50
mA
PC
0.2
W
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
hFE Classification
Marking
Rank
hFE
TR
R
180 390
TS
S
270 560
Symbol
Testconditons
VCBO IC=50ìA
VCEO IC=1mA
VEBO IE=50ìA
ICBO VCB=100V
IEBO VEB=4V
hFE VCE=6V, IC=2mA
VCE(sat) IC=10mA, IB=1mA
Cob VCB=12V, IE=0A, f=1MHz
fT VCE=-12V, IE= 2mA, f=100MHz
Min Typ Max Unit
120
V
120
V
5
V
0.5
A
0.5
A
180
560
0.5 V
2.5
pF
140
MHz
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