2SC3929A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon NPN Epitaxial Planar

SMD Type
Silicon NPN Epitaxial Planar
2SC3929A
TransistIoCrs
Features
Low noise voltage NV.
High forward current transfer ratio hFE.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
55
V
VCEO
55
V
VEBO
5
V
IC
50
mA
ICP
100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base-emitter voltage
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Symbol
Testconditons
Min Typ Max Unit
VCBO IC = 10ìA, IE = 0
55
V
VCEO IC = 2 mA, IB = 0
55
V
VEBO IE = 10 ìA, IC = 0
5
V
VBE VCE = 1 V, IC = 100 mA
0.7 1.0 V
ICBO VCB = 10 V, IE = 0
0.1 ìA
ICEO VCE = 10 V, IB = 0
1 ìA
hFE VCE = 5 V, IC = 2 mA
180
700
VCE(sat) IC = 100 mA, IB = 10 mA
0.6 V
fT VCB = 5 V, IE = ?2 mA, f = 200 MHz
100
MHz
NV
VCE = 10 V, IC = 1 mA, GV = 80 dB, Rg
= 100 kÙ, Function = FLAT
150 mV
hFE Classification
Marking
hFE
TR
180 360
TS
260 520
TT
360 700
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