2SC3906K_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
■ Features
● High Breakdown Voltage
● Complementary to 2SA1514K
Transistors
NPN Transistors
2SC3906K
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
0.15 +0.02
-0.02
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
120
VCEO
120
V
VEBO
5
IC
50
mA
ICP
100
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
1. Base
2. Emitter
3. Collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 50 uA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 50 μA， IC= 0
ICBO VCB= 100V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=10 mA, IB=1mA
VBE(sat) IC=10 mA, IB=1mA
hFE VCE= 6V, IC= 2mA
Cob VCB= 12V, IE= 0,f=1MHz
fT VCE= 12V, IE= -2mA,f=1MHz
■ Classification of hfe
Type
2SC3906K-R
Range
Marking
180-390
TR
2SC3906K-S
270-560
TS
Min Typ Max Unit
120
120
V
5
0.5
uA
0.5
0.5
V
1.2
180
560
2.5
pF
140
MHz
www.kexin.com.cn ¹