2SC3906K Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – High-voltage Amplifier Transistor

SMD Type
Transistors
High-voltage Amplifier Transistor
2SC3906K
Features
High breakdown voltage.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
120
V
VCEO
120
V
VEBO
5
V
IC
50
mA
PC
0.2
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=100V
IEBO VEB=4V
hFE VCE=6V, IC=2mA
VCE(sat) IC=10mA, IB=1mA
fT VCE=-12V, IE= 2mA, f=100MHz
Cob VCB=-12V, IE=0A, f=1MHz
Min Typ Max Unit
120
V
120
V
5
V
0.5 ìA
0.5 ìA
180
560
0.5 V
140
MHz
2.5
pF
hFE Classification
Marking
Rank
hFE
TR
R
180 390
TS
S
270 560
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