2SC3803 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (HIGH FREQUENCY , VIDEO AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS)

SMD Type
Transistors
High Frequency Amplifier Applications
2SC3803
Features
High Transition Frequency: fT = 200MHz(typ.)
Low Collector Output Capacitance: Cob = 3.5pF(typ.)
Complementary to 2SA1483
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
200
mA
Base Current
IB
50
mA
Collector Power Dissipation
PC
500
mW
PC *
1.0
W
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* Mounted on a ceramic substrate (250 mm² x 0.8t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Input Impedance (real part)
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
Testconditons
ICBO VCB = 45V , IE = 0
IEBO VEB = 5V , IC = 0
VCE = 1V , IC = 10mA
hFE
VCE = 3V , IC = 200mA
VCE(sat) IC = 100mA , IB = 10mA
VBE(sat) IC = 100mA , IB = 10mA
fT VCE = 10V , IC = 10mA
Re(hie) VCB = 10V , IE = -10mA , f = 200MHz
Cob VCB = 10V , IE = 0 , f = 1MHz
ton
tstg ^{See Test Circuit.}
tf
Min Typ Max Unit
0.1 uA
0.1 uA
40
240
20
0.3 V
1
V
100 200
MHz
120
3.5 5 pF
40
ns
250
ns
30
ns
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