2SC3734-3 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
■ Features
● High Speed: tstg < 200ns
● Complementary to 2SA1461
Transistors
NPN Transistors
2SC3734
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
60
Collector - Emitter Voltage
VCEO
40
V
Emitter - Base Voltage
VEBO
6
Collector Current - Continuous
IC
200
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 μA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 1 mA， IB= 0
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
Collector-base cut-off current
ICBO VCB= 30V , IE= 0
Emitter cut-off current
IEBO VEB= 5V , IC=0
Collector-emitter saturation voltage *1
VCE(sat) IC=50 mA, IB=5mA
Base - emitter saturation voltage *1
VBE(sat) IC=50 mA, IB=5mA
DC current gain *1
hFE(1)
hFE(2)
VCE= 1V, IC= 10mA
VCE= 1V, IC= 100mA
Turn-on time
ton
Storage time
tstg VCC=3V,IC=10mA,IB1=-IB2=1mA
Turn-off time
toff
Collector output capacitance
Cob VCB= 5V, IE= 0,f=1MHz
Transition frequency
*1 : Pulse :PW ≤ 350us,Duty Cycle ≤ 2℅
■ Classification of hfe(1)
fT
VCE= 20V, IE= -10mA
Type
2SC3734-B22 2SC3734-B23 2SC3734-B24
Range
Marking
75-150
B22
100-200
B23
150-300
B24
Min Typ Max Unit
60
40
V
6
0.1
uA
0.1
0.12 0.3
V
0.8 0.95
75 200 300
25 80
70
100 200 ns
250
3
4 pF
300 510
MHz
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