2SC3728 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

SMD Type
Small Signal Transistor
2SC3728
Transistors
Features
High hFE=150 to 800.
High collector current (Ic=2A).
High collector dissipation Pc=500mW.
Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA).
Small package for mounting.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation (Ta=25 )
Jumction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Rating
Unit
VCBO
20
V
VEBO
6
V
VCEO
12
V
ICM
3
A
IC
2
A
PC
500
mW
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
V(BR)CBO IC=10ìA,IE=0
V(BR)EBO IE=10ìA,IC=0
V(BR)CEO IC=5mA,RBE=
ICBO VCB=16V,IE=0
IEBO VEB=4V,IC=0
hFE VCE=4V,IC=100mA
VCE(sat) IC=1A,IB=50mA
fT VCE=2V,IE=-10mA
Cob VCB=10V,IE=0,f=1MHz
hFE Classification
Marking
hFE
YE
150 300
YF
250 500
YG
400 800
Min Typ Max Unit
20
V
6
V
12 14 16 V
0.1 ìA
0.1 ìA
150 350 800
0.2 0.35 V
40 80
MHz
28
pF
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