2SC3707 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For UHF amplification)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planar type
2SC3707
Features
Possible with the small current and low voltage
High transition frequency fT
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
10
V
VCEO
7
V
VEBO
2
V
IC
10
mA
PC
50
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Forward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
Testconditons
ICBO VCB = 10 V, IE = 0
IEBO VEB = 1.5 V, IC = 0
hFE VCE = 1 V, IC = 1 mA
fT VCE = 1 V, IC = 1 mA, f = 0.8 GHz
Cob VCB = 1 V, IE = 0, f = 1 MHz
|S21e|² VCE = 1 V, IC = 1 mA, f = 0.8 GHz
GUM VCE = 1 V, IC = 1 mA, f = 0.8 GHz
NF VCE = 1 V, IC = 1 mA, f = 0.8 GHz
Min Typ Max Unit
1 ìA
1 ìA
50
150
4
GHz
0.4
pF
6.0
dB
15
dB
3.5
dB
Marking
Marking
2X
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