2SC3661 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-hFE, Low-Frequency General-Purpose Amp Applications

SMD Type
TransistIoCrs
NPN Epitaxial Planar Silicon Transistor
2SC3661
Features
Low frequency general-purpose amplifiers, drivers, muting circuit.
Adoption of FBET process.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat) 0.5V).
High VEBO (VEBO 15V).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
15
V
IC
300
mA
Icp
500
mA
PC
200
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
Testconditons
ICBO VCB = 20V, IE=0
IEBO VEB = 10V, IC=0
hFE VCE =5V , IC = 10mA
fT VCE = 10V , IC = 10mA
Cob VCB = 10V , f = 1.0MHz
VCE(sat) IC = 200mA , IB = 4mA
VBE(sat) IC = 200mA , IB = 4mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , IB = 0
V(BR)EBO IE = 10ìA , IC = 0
Min Typ Max Unit
0.1 ìA
0.1 ìA
800 1500 3200
250
MHz
2.7
pF
0.12 0.5 V
0.85 1.2 V
30
V
25
V
15
V
Marking
Marking
FY
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